China Develops Poxiao: The World's Fastest Flash Memory
Researchers in China have introduced a new kind of flash memory called Poxiao, which is being called the fastest in the world. Developed by a team at Fudan University in Shanghai, this breakthrough could change the future of data storage and artificial intelligence (AI).
What Makes Poxiao Special?
Poxiao is not just slightly faster—it’s incredibly fast. It can erase and rewrite data in just 400 picoseconds. To put that into perspective, a picosecond is one trillionth of a second. That makes Poxiao nearly 100,000 times faster than the flash memory we use today in devices like smartphones, SSDs, and USB drives.
How Does It Work?
The secret behind Poxiao’s speed lies in a technique called “2D-enhanced hot-carrier injection.” In simpler terms, this is a new way of moving electrons quickly and efficiently across layers of memory. The process uses special two-dimensional materials to control how electrons behave, making data processing and storage much faster.
Why This Matters for AI and Data Storage
Today’s computers and AI systems face a major challenge—memory can’t keep up with processing speeds. This slows things down, especially when handling large amounts of data. Poxiao could solve this problem by letting computers access and rewrite memory much faster. That could help AI models learn quicker, make data centers more efficient, and improve overall system performance.
Still in the Research Phase
Even though the technology is promising, Poxiao isn’t available for commercial use yet. It's currently in the research and testing stage, and it may take some time before it can be manufactured on a large scale. However, experts believe it could lead to major changes in the tech world once it’s fully developed.